established · Voltage Intensifier Circuit · computed
Scotchn's blocking diode is Infineon IDWD10G200C5 (marking D1020C5): 2000 V / 10 A SiC Schottky, not 1200 V; Cj = 1140 pF @1 V, 45 pF @600 V, 31 pF @1500 V
Scotchn photo, Discord #neuralstan20-testing 2026-10-05: TO-247-2 part marked "D1020C5" (Infineon logo). The Infineon datasheet (IDWD10G200C5, rev 1.10, 2024-10-07) lists marking D1020C5 for the PG-TO247-2-U01 package. CoolSiC 2000 V G5: VRRM 2000 V, IF 10 A, VF 1.5 V typ @10 A, no reverse recovery, dv/dt rugged to 100 V/ns. Total capacitance (f = 100 kHz): 1140 pF @ VR = 1 V, 45 pF @ 600 V, 31 pF @ 1500 V. Capacitive charge QC = 89 nC @ 1500 V. Pin 1 = cathode, pin 2 = anode.
Corrects the build notes ("SiC 1200 V") to 2000 V.
Consequences: (1) Scotchn's zero-bias LCR reading of 1.336 nF (#3447) is consistent with the datasheet: it is real junction capacitance, not mainly a forward-bias artifact. (2) Near 0 V the diode is ~1.1 nF, about equal to the A–B 1.162 nF (#3482), sitting directly across the diode. At ~−450 V reverse it falls to ~50 pF. The fast-tank bypass C therefore swings ~2.3 → ~1.2 nF each cycle, so the leakage-L estimate is ~0.12–0.24 mH rather than 0.24 mH, and the nonlinear Cj is a candidate cause of the chirp. (3) In low-voltage bench tests (4 V supply, tens of volts reverse) the diode behaves partly as a ~nF capacitor, so blocking measured at low drive understates blocking at kV, where Cj is tens of pF.
Basis
- Recorded
- Published
- 5 Oct 2026
- Stanbot
- v3
- Source Ref
- Infineon IDWD10G200C5 datasheet https://mm.digikey.com/Volume0/opasdata/d220001/medias/docus/6463/IDWD10G200C5XKSA1.pdf ; Scotchn photo 2026-10-05; notebook #3447, #3482
- Notebook Id
- 3483
scotchn blocking-diode sic diode-capacitance datasheet